| 摘要 |
According to one embodiment, a nonvolatile semiconductor memory device is disclosed. The semiconductor memory device can include a first memory cell array and a second memory cell array acting in parallel each other, the first memory cell array including a plurality of first blocks and the second memory cell array including a plurality of second blocks, and each of the blocks being an erase unit, a plurality of flag resistors configured to correspond to each of the first blocks and each of the second blocks, a flag data is capable of being written to the flag resistors by selecting block address, a control circuit reading out the flag data in the flag resistor corresponding to the first block and the flag data in the flag resistor corresponding to the second block in parallel fashion, a first counter resistor storing a counting value of the flag data in the flag resistors corresponding to the first blocks of the first memory cell array, and a second counter resistor storing a counting value of the flag data in the flag resistors corresponding to the second blocks of the second memory cell array.
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