发明名称 |
Low resistance electrode and compound semiconductor light emitting device including the same |
摘要 |
A low resistance electrode and a compound semiconductor light emitting device including the same are provided. The low resistance electrode deposited on a p-type semiconductor layer of a compound semiconductor light emitting device including an n-type semiconductor layer, an active layer, and the p-type semiconductor layer, including: a reflective electrode which is disposed on the p-type semiconductor layer and reflects light being emitted from the active layer; and an agglomeration preventing electrode which is disposed on the reflective electrode layer in order to prevent an agglomeration of the reflective electrode layer during an annealing process. |
申请公布号 |
US8405109(B2) |
申请公布日期 |
2013.03.26 |
申请号 |
US201113095487 |
申请日期 |
2011.04.27 |
申请人 |
KWAK JOON SEOP;SEONG TAE YEON;CHO JAE HEE;SONG JUNE-O;LEEM DONG SEOK;KIM HYUN SOO;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWAK JOON SEOP;SEONG TAE YEON;CHO JAE HEE;SONG JUNE-O;LEEM DONG SEOK;KIM HYUN SOO |
分类号 |
H01L33/00;H01L21/00;H01L21/28;H01L21/285;H01L21/3205;H01L21/44;H01L23/40;H01L23/48;H01L23/52;H01L29/20;H01L29/45;H01L33/32;H01L33/42 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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