发明名称 |
Photonic crystal light emitting device and manufacturing method of the same |
摘要 |
There is provided a photonic crystal light emitting device including: a light emitting structure including first and second conductivity type semiconductor layers and an active layer interposed therebetween; a transparent electrode layer formed on the second conductivity type semiconductor layer, the transparent electrode layer having a plurality of holes arranged with a predetermined size and period so as to form a photonic band gap for light emitted from the active layer, whereby the transparent electrode layer includes a photonic crystal structure; and first and second electrode electrically connected to the first conductivity type semiconductor layer and the transparent electrode layer, respectively. The photonic crystal light emitting device has a transparent electrode layer formed of a photonic crystal structure defined by minute holes, thereby improved in light extraction efficiency. |
申请公布号 |
US8405103(B2) |
申请公布日期 |
2013.03.26 |
申请号 |
US20080182383 |
申请日期 |
2008.07.30 |
申请人 |
LEE DONG YUL;PARK SEONG JU;KWON MIN KI;KIM JA YEON;KIM YONG CHUN;OH BANG WON;HWANG SEOK MIN;KIM JE WON;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE DONG YUL;PARK SEONG JU;KWON MIN KI;KIM JA YEON;KIM YONG CHUN;OH BANG WON;HWANG SEOK MIN;KIM JE WON |
分类号 |
H01L33/00;H01L33/32;H01L33/38;H01L33/42 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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