| 摘要 |
<p>PURPOSE: A semiconductor crystal substrate, a method for manufacturing the same, a method for manufacturing a semiconductor device, a power unit, and an amplifier are provided to improve the yield of the semiconductor device. CONSTITUTION: A protective layer(120) including nitride is formed on a substrate. Oxygen is injected to the protective layer. A heating process for crystallization is performed on the protective layer. A buffer layer(140), an electron moving layer(150), and an electron supplying layer(160) are formed by an epitaxial growth. [Reference numerals] (AA) Process drawing of a method of manufacturing a semiconductor crystal substrate and a semiconductor device according to a first embodiment(2)</p> |
