发明名称 |
Millimeter-wave on-chip switch employing frequency-dependent inductance for cancellation of off-state capacitance |
摘要 |
A semiconductor switching device includes a field effect transistor and an inductor structure that provides a frequency dependent inductance in a parallel connection. During the off-state of the semiconductor switching device, the frequency dependent impedance component due to the off-state parasitic capacitance of the switching device is cancelled by the frequency dependent inductance component of the inductor structure, which provides a non-linear impedance as a function of frequency. The inductor structure provides less inductance at a higher operating frequency than at a lower operating frequency to provide more effective cancellation of two impedance components of the parasitic capacitance and the inductance. Thus, the semiconductor switching device can provide low parasitic coupling at multiple operating frequencies. The operating frequencies of the semiconductor switching device can be at gigahertz ranges for millimeter wave applications. |
申请公布号 |
US8405453(B2) |
申请公布日期 |
2013.03.26 |
申请号 |
US20100839777 |
申请日期 |
2010.07.20 |
申请人 |
WOODS, JR. WAYNE H.;WANG GUOAN;DING HANYI;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
WOODS, JR. WAYNE H.;WANG GUOAN;DING HANYI |
分类号 |
H03K5/00;H01L27/24 |
主分类号 |
H03K5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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