| 摘要 |
PURPOSE: A substrate processing apparatus using plasma and a substrate processing method using the same are provided to apply RF power compensation according to the location of a bottom electrode by using a main power supply unit and a secondary power supply unit. CONSTITUTION: A chamber(50) provides space for processing a substrate by generating plasma. An upper electrode(55) and a bottom electrode(60) are respectively arranged at an inner upper portion and an inner lower portion of the chamber. The upper electrode can be composed of a ground electrode. The bottom electrode applies RF power in order to generate the plasma between upper electrodes. The bottom electrode is generally arranged on a substrate mounting table(56). The bottom electrode is connected to a main power supply unit(70) applying RF power. A matching box(72) is arranged between the bottom electrode and the main power supply unit. A matching box(77) is arranged between the bottom electrode and a secondary power supply unit(75). |
