| 摘要 |
PURPOSE: A light emitting device is provided to reduce the deformity of GaN by forming SixAlyN1-x-y in a first conductive semiconductor layer. CONSTITUTION: A light emitting structure includes a first conductive semiconductor layer(142a), a second conductive semiconductor layer, and an active layer. The active layer is arranged between the first conductive semiconductor layer and the second conductive semiconductor layer. The light emitting structure includes GaN. A protrusion part is arranged in an interlayer.
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