SEMICONDUCTOR ELEMENT HAVING DOPED P/N STRUCTURES AND METHOD TO ISOLATE THEM USING ULTRA SHORT ULTRAVIOLET LASER PULSES

摘要

The invention aims - to prepare the semiconductor substrate able to cover under the appropriate passivation layer and to form contacts and to form in said passivation layer at determinate locations grooves with determinate depth and width in order to isolate the individual semiconductor regions, particularly in the edge of the device. Thus, the prepared composite element can be used for a variety of semiconductor device fabrication, particularly in solar cell production. It is extremely important for solar cell production with concentrate light and a small area / perimeter ratio. This method of forming ridges in the composite element characterized that includes semiconductor and possibly coated dielectric layers laser ablation with ultrashort (fs) ultraviolet (UV) pulses scanning laser fiber by semiconductor bolster surface or moving the same pattern in respect of laser fiber. This method allows form mentioned grooves on the surface of the semiconductor substrate without semiconductor heat, ensuring a minimum redeposition of material. This method is contactless and can therefore be applied to form contacts on very thin and brittle semiconductor or alloy semiconductor layers, without prejudice to the semiconductor surface neither mechanically nor thermally.