| 摘要 |
Disclosed is a plasma processing apparatus comprising: a chamber comprising a plasma processing space and an opened top; a dielectric window used for covering the top part of the chamber; a window frame used for supporting the dielectric window; an antenna which is arranged on the dielectric window and enables an inductively coupled plasma (ICP) to generate in the plasma processing space; a capacitively coupled plasma (CCP) frame which is arranged below the antenna and enables a CCP to generate in the plasma processing space; and a base which is arranged in the plasma processing space, wherein a substrate acting as an object to be processed is placed on the base. In this way, both the ICP and the CCP can be obtained, thereby benefiting an initial discharging of the ICP, preventing plasma reduction caused by the frame, and raising processing speed. |
