发明名称 PROCESS FOR THE PREPARATION OF NANOSTRUCTURED MATERIAL ZnO WITH P-TYPE OF CONDUCTIVITY
摘要 A process for the preparation of nanostructured material ZnO with p-type of conductivity comprises growth of nanostructure on the rudiment layer of ZnO in electrochemical cell with electrodes from solution of reagents, where to working electrode voltage is applied. Ceramized substrate is used as working electrode-cathode, and as the second electrode-anode – graphite plate. Nanorods are precipitated to the preliminary coated on substrate layer of nanoparticles of ZnO from aqueous equimolar Zn(NO)•6HO solution and hexamine (CHN) of 10-30 mM concentration, pH 7±0.1 and 0.1 1M KCl, and ZnO nanorods are obtained with mean diameter of 50-150 Nm.
申请公布号 UA78485(U) 申请公布日期 2013.03.25
申请号 UA20120008985U 申请日期 2012.07.20
申请人 IVAN FRANKO LVIV NATIONAL UNIVERSITY 发明人 LUBOCHKOVA HALYNA OLEKSANDRIVNA;TURKO BORYS IHOROVYCH;KREHEL OLHA PETRIVNA;KAPUSTIANYK VOLODYMYR BOHDANOVYCH;KITYK IVAN;PIASETSKI MIKHAL
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