RESISTANCE CHANGE NONVOLATILE MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND METHOD OF OPERATING RESISTANCE CHANGE NONVOLATILE MEMORY DEVICE

摘要

PURPOSE: A resistance change nonvolatile memory device, a semiconductor device, and a method for operating resistance change nonvolatile memory device are provided to secure high-speed switching operation by using a step for forming a filament. CONSTITUTION: A first electrode(14) and a second electrode(11) are formed on a resistance change part(18). A resistance change layer(13) changes resistance. A stability layer(12) forms a filament. The resistance change layer and the stability layer are made of different metal oxide.