METHOD FOR FABRICATING STACKED NITRIDE-COMPOUND SEMICONDUCTOR STRUCTURE AND METHOD FOR FABRICATING NITRIDE-COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

PURPOSE: A method for fabricating a stacked nitride compound semiconductor structure and a method for fabricating a nitride compound semiconductor light emitting device are provided to maintain the flatness of a substrate surface. CONSTITUTION: A first protection layer is formed on a second surface(11b) of a substrate(11). A first nitride semiconductor layer(12) is formed on a first surface(11a) of the substrate. A second protection layer is formed on the first nitride semiconductor layer. The first protection layer is removed to expose a second surface of the substrate. A second nitride semiconductor layer(13) is formed in the second surface of the substrate.