发明名称 READ ASSIST FOR MEMORY CIRCUITS
摘要 A method increases stability of a memory circuit by pre-charging at least one bit line of the memory circuit to a first voltage, pre-charging at least one other bit line of the memory circuit to a second voltage, and equalizing charge across the bit lines so that the bit lines are pre-charged with a third voltage.
申请公布号 KR101246130(B1) 申请公布日期 2013.03.22
申请号 KR20117011693 申请日期 2009.10.21
申请人 发明人
分类号 G11C7/12;G11C11/419 主分类号 G11C7/12
代理机构 代理人
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