| 摘要 |
A TFT 17 provided on a substrate 3 is provided. The TFT 17 includes a gate electrode 31, a gate insulating film 32, a semiconductor 33, a source electrode 34, a drain electrode 35, and a protection film 36. The semiconductor 33 includes a metal oxide semiconductor. The semiconductor 33 has a source portion 33a which is in contact with the source electrode 34, a drain portion 33b which is in contact with the drain electrode 35, and a channel portion 33c which is exposed through the source electrode 34 and the drain electrode 35. A conductive layer 37 having a relatively small electrical resistance is formed in each of the source portion 33a and the drain portion 33b. The conductive layer 37 is removed from the channel portion 33c. |
