| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a substrate processing device and a manufacturing method of a semiconductor device capable of obtaining uniform in-plane substrate processing with high reproducibility. <P>SOLUTION: A substrate processing device comprises: a processing chamber which processes a substrate; a substrate support unit which supports the substrate in the processing chamber; a gas supply unit which supplies a process gas into the processing chamber; a plasma generation unit which excites the process gas supplied into the processing chamber; a plurality of impedance electrodes provided inside the substrate support unit; a substrate potential distribution adjustment unit provided per impedance electrode; an exhaust unit which exhausts gas within the processing chamber; and a control unit which controls at least the gas supply unit, plasma generation unit, and substrate potential distribution adjustment unit. The control unit at least controls the plasma generation unit to excite the process gas supplied from the gas supply unit and the substrate potential distribution adjustment unit to adjust the potential distribution on a processing surface of the substrate when the excited process gas is supplied to the substrate and processed. <P>COPYRIGHT: (C)2013,JPO&INPIT |
