| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having high reliability of a gate insulating film at the time of operating without causing variation in element characteristics and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor device of the present invention is formed on an SiC substrate 11 and includes a drift region 12 in which a convex region 111 is formed on its surface; a first well region 13 of a second conductivity type that is formed on the surface other than the convex region 111; a source region 14 of a first conductivity type that is selectively formed on a surface of the first well region 13 and defines the surface of the first well region 13 between the drift region 12 and the source region 14 as a channel region; a source pad 3 that is electrically connected to the source region 14 and the first well region 13; an electric-field relaxation region 17 of the second conductivity type that is formed on a surface of the convex region 111; a gate insulating film 21 that is formed on the source region 14, the channel region, and the convex region 111; a gate electrode 22 that is formed on the gate insulating film 21; and a conduction structure between the electric-field relaxation region 17 and the first well region 13. <P>COPYRIGHT: (C)2013,JPO&INPIT |
