发明名称 SOLID-STATE IMAGE SENSOR, METHOD FOR PRODUCING SOLID-STATE IMAGE SENSOR, AND ELECTRONIC APPARATUS
摘要 A solid-state image sensor includes a semiconductor substrate having a photoelectric conversion element converting incident light into a charge and a charge retaining section temporarily retaining the charge photoelectrically converted by the photoelectric conversion element and a light shielding section having an embedded section extending in at least a region between the photoelectric conversion element and the charge retaining section of the semiconductor substrate.
申请公布号 US2013070131(A1) 申请公布日期 2013.03.21
申请号 US201213606828 申请日期 2012.09.07
申请人 OHKUBO TOMOHIRO;ENDO SUZUNORI;SONY CORPORATION 发明人 OHKUBO TOMOHIRO;ENDO SUZUNORI
分类号 H04N5/335 主分类号 H04N5/335
代理机构 代理人
主权项
地址