发明名称 |
MOSFET INTEGRATED CIRCUIT WITH UNIFORMLY THIN SILICIDE LAYER AND METHODS FOR ITS MANUFACTURE |
摘要 |
An MOSFET device having a Silicide layer of uniform thickness, and methods for its fabrication, are provided. One such method involves depositing a metal layer over wide and narrow contact trenches on the surface of a silicon semiconductor substrate. Upon formation of a uniformly thin amorphous intermixed alloy layer at the metal/silicon interface, the excess (unreacted) metal is removed. The device is annealed to facilitate the formation of a thin silicide layer on the substrate surface which exhibits uniform thickness at the bottoms of both wide and narrow contact trenches.
|
申请公布号 |
US2013069124(A1) |
申请公布日期 |
2013.03.21 |
申请号 |
US201113237732 |
申请日期 |
2011.09.20 |
申请人 |
YANG BIN;LAVOIE CHRISTIAN;ALPTEKIN EMRE;OZCAN AHMET S.;TRAN CUNG D.;RAYMOND MARK;INTERNATIONAL BUSINESS MACHINES CORPORATION;GLOBALFOUNDRIES INC. |
发明人 |
YANG BIN;LAVOIE CHRISTIAN;ALPTEKIN EMRE;OZCAN AHMET S.;TRAN CUNG D.;RAYMOND MARK |
分类号 |
H01L29/78;H01L21/20 |
主分类号 |
H01L29/78 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|