RESISTIVE SWITCHING DEVICES HAVING ALLOYED ELECTRODES AND METHODS OF FORMATION THEREOF

摘要

A resistive switching device comprises a bottom electrode (115), a switching layer (130) disposed over the bottom electrode (115), and a electrode (150) disposed over the switching layer (130). The top electrode (150) comprises an alloy of a memory metal and an alloying element. The top electrode (150) provides a source of the memory metal. The memory metal is configured to change a state of the switching layer (130).