发明名称 Manufacturing photonic component in a surface layer of a semiconductor wafer, comprises e.g. focusing the laser beam on the material at a predetermined depth, and altering a characteristic of the material in the focus-region
摘要 Manufacturing at least one photonic component in a surface layer of a semiconductor wafer and/or within the semiconductor wafer, preferably a semiconductor chip, comprises coupling at least one laser beam in the material of the surface layer and/or the semiconductor wafer, focusing the laser beam on the material at a predetermined depth, and altering at least one characteristic of the material and/or structure of the material in the region of focus. Independent claims are also included for: (1) an apparatus for carrying out the above method, comprising (i) a laser unit for generating at least one laser beam, (ii) a focusing unit for focusing the laser beam at a focus at a predetermined depth in the material of the surface layer and/or the semiconductor wafer, (iii) a displaceable positioning device for focusing the laser beam at a predetermined location, where the apparatus carries out the above mentioned method in all directions by a multiple-axis-traversing device, and (iv) a position control device, preferably a laser interferometry-system or a piezoelectric system, for detecting the position of the semiconductor wafer, the material and/or the laser unit; and (2) the semiconductor wafers and/or semiconductor chip made by the above mentioned method and/or using the above mentioned apparatus, in which at least one photonic components and/or functionalities, preferably a waveguide, preferably a polarization-maintaining waveguide, a ring resonator, preferably a three-dimensional and/or multi-stage ring resonator, a waveguide switch, a waveguide splitter, a waveguide combiner, a waveguide junction, a Fabry-Perot-resonator, a coupler, a circulator, a multiplexer, a demultiplexer, preferably electrical and/or optical, modulator with respect to amplitude, phase and/or polarization, a mirror, a Bragg-structure, a diffraction grid, a fiber-chip-coupling, a light beam-forming with respect to the beam cross-section, an electrical sensor, an optical sensor, a chemical sensor, or a router is inserted.
申请公布号 DE102011113824(A1) 申请公布日期 2013.03.21
申请号 DE201110113824 申请日期 2011.09.21
申请人 BIAS - BREMER INSTITUT FUER ANGEWANDTE STRAHLTECHNIK GMBH 发明人 BERGMANN, RALF;BUELTERS, MIKE;VITTAL PARSI SREENIVAS, VIJAY
分类号 H01L21/322;B23K26/40;G02B6/024;G02B6/12;H01L31/10;H01L49/00;H01P3/00 主分类号 H01L21/322
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