| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an adiabatic SRAM circuit which realizes lower power consumption by improving a circuit structure and a control method of the SRAM circuit. <P>SOLUTION: A flip-flop circuit comprising an inverter used as memory storage in conventional adiabatic SRAM is replaced by a resistance load type MOS transistor, and a CMOS transmission gate is disposed for switching read/write selection lines, thereby avoiding increase in power consumption during writing. <P>COPYRIGHT: (C)2013,JPO&INPIT |
