| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device including memory cells having a resistance change element, in which generation of a defective cell due to forming condition setting is prevented. <P>SOLUTION: A semiconductor device comprises: a plurality of first memory cells, each of which has a first resistance change element and is accessed in normal operation; at least one second memory cell 54a-54c having a second resistance change element 60a-60c that is substantially the same as the first resistance change element, which is not accessed in normal operation and is accessed in test operation; and a control circuit 40 that performs forming for the second memory cell in test operation. <P>COPYRIGHT: (C)2013,JPO&INPIT |
