| 摘要 |
A placement of non-planar FET devices is disclosed, which includes non-planar devices that have electrodes, and the electrodes contain fins and an epitaxial layer which merges the fins together. The non-planar devices are so placed that their gate structures are in a parallel configuration separated from one another by a first distance, and the fins of differing non-planar devices line up in essentially straight lines. The electrodes of differing FET devices are separated from one another by a cut defined by opposing facets of the electrodes, with the opposing facets also defining the width of the cut. The width of the cut is smaller than one fifth of the first distance which separates the gate structures.
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