发明名称 |
INTEGRATED CIRCUIT HAVING MEMORY WITH LOW VOLTAGE READ/WRITE OPERATION |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide an integrated circuit having a memory with a low voltage read/write operation without increasing the size of a bitcell. <P>SOLUTION: A discharge circuit is coupled to a power supply voltage node of each of a plurality of memory cells, and changes the voltage on the power supply voltage node of each of the selected plurality of memory cells during a first portion of a write operation from a first power supply voltage to a predetermined voltage below the first power supply voltage. A memory cell power supply multiplexing circuit is coupled to the power supply voltage node of each of the plurality of memory cells; provides a first power supply voltage to the power supply voltage node of a selected column of memory cells during a write operation; and provides a second power supply voltage greater than the first power supply voltage to the power supply voltage node of all of the unselected columns during the write operation. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013054818(A) |
申请公布日期 |
2013.03.21 |
申请号 |
JP20120274485 |
申请日期 |
2012.12.17 |
申请人 |
FREESCALE SEMICONDUCTOR INC |
发明人 |
PRASHANT U KENKARE;ANDREW C RUSSELL;DAVID R BEARDEN;JAMES D BURNETT;TROY L COOPER;ZHANG SHAYAN |
分类号 |
G11C11/413 |
主分类号 |
G11C11/413 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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