| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a formation method of a phase change memory in which the filling properties of a phase change film for a recess in a substrate can be enhanced while minimizing change in composition of the phase change film, and to provide a formation device of the phase change memory. <P>SOLUTION: When forming a phase change memory, a phase change film 24 is formed on the upper surface 23s and in the hole 23h of an insulating film 23 by sputtering a metal chalcogenide target. Subsequently, a cap film 25 for covering the phase change film 24 is formed. Furthermore, reflow for filling the hole 23h with the phase change film 24 is performed by heating the phase change film 24. The cap film 25 is formed of a material that exhibits lower wettability to the phase change film 24 than that to the insulating film 23. <P>COPYRIGHT: (C)2013,JPO&INPIT |
