| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film forming condition setting method of a crystalline silicon photoelectric conversion layer, for manufacturing a photoelectric conversion device of high performance. <P>SOLUTION: SiH<SB POS="POST">4</SB>flow rate is increased for a film forming condition candidate, to form a photoelectric conversion layer 92 made from crystalline silicon, so that an area rate and in-substrate plane distribution of a high brightness reflection region of the photoelectric conversion layer 92 are obtained. In a case where the distribution is uniform, a film forming condition candidate is set to be a final film forming condition. In a case where the distribution is not uniform, a high frequency power density supplied to each power feeding point of a discharge electrode is adjusted and is set to be a final film forming condition. For the photoelectric conversion layer 92 having an arbitrary Raman peak ratio that is obtained in advance, a correlation between the change amount of the SiH<SB POS="POST">4</SB>flow rate and the area rate of high brightness reflection region is used as a base, to obtain the Raman peak ratio of the photoelectric conversion layer 92. In a case where the obtained Raman peak ratio satisfies a design value, the film forming condition candidate is set to be a final film forming condition. In a case where the Raman peak ratio strays from the design value, the SiH<SB POS="POST">4</SB>flow rate, a SiH<SB POS="POST">4</SB>division voltage or high frequency power density is adjusted, for setting a final film forming condition. <P>COPYRIGHT: (C)2013,JPO&INPIT |
