| 摘要 |
<P>PROBLEM TO BE SOLVED: To suppress electric field concentration to an end of an electrode and to suppress characteristic deterioration due to deformation of a gate electrode and capacitance occurring between the gate electrode and a field-plate electrode. <P>SOLUTION: A semiconductor device includes: a first substrate; an element region that is formed on a surface of the first substrate; a gate electrode, a source electrode, and a drain electrode that are connected to the element region and are formed on the first substrate; a second substrate that is stacked on a first surface of the first substrate; via holes that penetrate through the second substrate and are disposed on the electrodes; metal layers that are formed in the via holes and are connected to the electrodes; and a field-plate electrode that is provided on the second substrate and is connected to any of the gate electrode, the source electrode, and the drain electrode. <P>COPYRIGHT: (C)2013,JPO&INPIT |
