发明名称 |
SEMICONDUCTOR LIGHT EMITTING DEVICE, WAFER, METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE, AND METHOD FOR MANUFACTURING WAFER |
摘要 |
According to one embodiment, a semiconductor light emitting device includes a first layer of n-type and a second layer of p-type including a nitride semiconductor, a light emitting unit provided between the first and second layers, a first stacked structure provided between the first layer and the light emitting unit, and a second stacked structure provided between the first layer and the first stacked structure. The light emitting unit includes barrier layers and a well layer provided between the barrier layers. The first stacked structure includes third layers including a nitride semiconductor, and fourth layers stacked with the third layers and including GaInN. The fourth layers have a thinner thickness than the well layer. The second stacked structure includes fifth layers including a nitride semiconductor, and sixth layers stacked with the fifth layers and including GaInN. The sixth layers have a thinner thickness than the well layer.
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申请公布号 |
US2013069032(A1) |
申请公布日期 |
2013.03.21 |
申请号 |
US201213406705 |
申请日期 |
2012.02.28 |
申请人 |
KUSHIBE MITSUHIRO;OHBA YASUO;KATSUNO HIROSHI;KANEKO KEI;YAMADA SHINJI;KABUSHIKI KAISHA TOSHIBA |
发明人 |
KUSHIBE MITSUHIRO;OHBA YASUO;KATSUNO HIROSHI;KANEKO KEI;YAMADA SHINJI |
分类号 |
H01L33/04 |
主分类号 |
H01L33/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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