NON-VOLATILE STORAGE ELEMENT, NON-VOLATILE STORAGE DEVICE, PRODUCTION METHOD FOR NON-VOLATILE STORAGE ELEMENT, AND PRODUCTION METHOD FOR NON-VOLATILE STORAGE DEVICE

摘要

A non-volatile storage element (20) comprising: a first electrode (105); a second electrode (107); a variable resistance layer (106) interposed between the first electrode (105) and the second electrode (107), and configured by laminating a first variable resistance layer (1061) connected to the first electrode (105), and a second variable resistance layer (1062) connected to the second electrode (107); and a side wall protection layer (108) having oxygen barrier properties and covering the side walls of the variable resistance layer (106). The first variable resistance layer (1061) is configured by a first metal oxide (106a), and a third metal oxide (106c) formed around the first metal oxide and having a lower oxygen deficiency than the first metal oxide (106a). The second variable resistance layer (1062) is configured from a second metal oxide (106b) having a lower oxygen deficiency than the first metal oxide (106a).