RESISTIVE MEMORY CELL

摘要

Semiconductor memory devices, resistive memory devices, memory cell structures, and methods of forming a resistive memory cell (106, 230, 350, 360, 470, 480) are provided. One example method of a resistive memory cell (106, 230, 350, 360, 470, 480) can include a number of dielectric regions (236, 356, 366, 476, 486) formed between two electrodes (102/104, 232/234, 352/354, 362/364, 472/474, 482/484), and a barrier dielectric region (238, 358, 368, 478, 488) formed between each of the dielectric regions (236, 356, 366, 476, 486). The barrier dielectric region (238, 358, 368, 478, 488) serves to reduce an oxygen diffusion rate associated with the dielectric regions (236, 356, 366, 476, 486).