| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce the resistance of a conducting path when forming the conducting path by embedding a copper material in a recess for embedment formed in an interlayer insulating film consisting of an SiCOH film. <P>SOLUTION: When a recess is formed in an SiCOH film by means of plasma, the surface becomes hydrophobic. Remote plasma of hydrogen gas is supplied to the SiCOH film, and the surface of the recess is modified to hydrophilic by H radicals and H ions. Hydrogen peroxide water may be supplied in place of the plasma, and an OH group is formed on the surface in this case. Subsequently, an Ru film 4 is deposited by CVD by using Ru<SB POS="POST">3</SB>(CO)<SB POS="POST">12</SB>gas and CO gas, for example, a copper material 5 is then embedded and subjected to CMP processing, thus forming an upper layer side wiring structure. Glyme, DMEDA, or the like, may be used in modification. <P>COPYRIGHT: (C)2013,JPO&INPIT |
