| 摘要 |
<P>PROBLEM TO BE SOLVED: To measure the overlap capacity without disposing a contact between narrow gate electrodes. <P>SOLUTION: The semiconductor device includes a following first TEG pattern (not shown). The first TEG pattern includes an element isolation region 500, an aperture (not shown) formed in the element isolation region 500, a plurality of gate electrodes 300 provided above the aperture to extend in parallel with each other, and a diffusion region 200 formed in a part of the aperture not covered with the gate electrode 300. One end of the gate electrodes 300 is located on the inside of the outer edge of the aperture. A first contact 240 is located between one end of the gate electrode 300 and the outer edge of the aperture, and connected with the diffusion region 200. Meanwhile, a second contact 340 is connected with the gate electrode 300. <P>COPYRIGHT: (C)2013,JPO&INPIT |
