| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device and a method for manufacturing the semiconductor device are provided. A semiconductor substrate has a surface on which an abrasion trace is formed, and a dopant diffusion region includes a portion extending in the direction at an angle within the range of−5° to +5° with respect to the direction in which the abrasion trace extends
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| 申请公布号 |
US2013069209(A1) |
申请公布日期 |
2013.03.21 |
| 申请号 |
US201113699397 |
申请日期 |
2011.05.13 |
| 申请人 |
FUJITA KENJI;FUNAKOSHI YASUSHI;OKA HIROYUKI;OKAMOTO SATOSHI;SHARP KABUSHIKI KAISHA |
发明人 |
FUJITA KENJI;FUNAKOSHI YASUSHI;OKA HIROYUKI;OKAMOTO SATOSHI |
| 分类号 |
H01L29/06;H01L21/22 |
主分类号 |
H01L29/06 |
| 代理机构 |
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