发明名称 Semiconductor Device and Method of Forming Stacked Semiconductor Die and Conductive Interconnect Structure Through an Encapsulant
摘要 A semiconductor device has a first conductive layer formed over a first substrate. A second conductive layer is formed over a second substrate. A first semiconductor die is mounted to the first substrate and electrically connected to the first conductive layer. A second semiconductor die is mounted to the second substrate and electrically connected to the second conductive layer. The first semiconductor die is mounted over the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and the first and second substrates. A conductive interconnect structure is formed through the encapsulant to electrically connect the first and second semiconductor die to the second surface of the semiconductor device. Forming the conductive interconnect structure includes forming a plurality of conductive vias through the encapsulant and the first substrate outside a footprint of the first and second semiconductor die.
申请公布号 US2013069239(A1) 申请公布日期 2013.03.21
申请号 US201113234902 申请日期 2011.09.16
申请人 KIM YOUNGJOON;PARK SANGMI;JEONG YONGHYUK;STATS CHIPPAC, LTD. 发明人 KIM YOUNGJOON;PARK SANGMI;JEONG YONGHYUK
分类号 H01L23/498;H01L21/50 主分类号 H01L23/498
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