发明名称 Method of Manufacturing a Device with a Cavity
摘要 The invention relates to a micro-device with a cavity, the micro-device comprising a substrate, the method comprising steps of: A) providing the substrate, having a surface and comprising a sacrificial oxide region at the surface; B) covering the sacrificial oxide region with a porous layer being permeable to a vapor HF etchant, and C) selectively etching the sacrificial oxide region through the porous layer using the vapor HF etchant to obtain the cavity. This method may be used in the manufacture of various micro-devices with a cavity, i.e. MEMS devices, and in particular in the encapsulation part thereof, and semiconductor devices, and in particular the BEOL-part thereof.
申请公布号 US2013069178(A1) 申请公布日期 2013.03.21
申请号 US201213673494 申请日期 2012.11.09
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY,;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD 发明人 VERHEIJDEN GREJA JOHANNA ADRIANA MARIA;DAAMEN ROEL;KOOPS GERHARD
分类号 H01L29/84;H01L21/02;H01L21/50 主分类号 H01L29/84
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