| 摘要 |
<p>Disclosed in the present invention is a method for manufacturing a cavity of a full silicon-based microfluidic device, and the method comprises the following steps: providing the monocrystalline silicon substrate (001) in the <111> crystallographic direction, on which an oxide layer (002) is formed; patterning the oxide layer to show up a plurality of foursquare windows (003); etching the monocrystalline silicon substrate to form a plurality of upperlayer deep pools (004) using the oxide layer as mask; depositing a protective layer (005) on the surface of the oxide layer and the sidewall and the bottom of the upperlayer deep pools; removing the protective layer on the surface of the oxide layer and the bottom of the upperlayer deep pools; etching the monocrystalline silicon substrate to form a plurality of underlayer deep pools (007) using the oxide layer and the protective layer on the sidewall of the upperlayer deep pools as mask; wet etching the underlayer deep pools to form a cavity (008) inside the monocrystalline silicon substrate; filling the holes of the upperlayer deep pools to close the cavity; etching the monocrystalline silicon substrate to form four reaction tanks connected with the cavity using the oxide layer as mask. The invention is based on the monocrystalline silicon substrate itself during the formation of the cavity, without relating to si-bonding or gluing, thus saving the area of the chip and lowering the processing difficulty.</p> |
