| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a backside-illumination CMOS sensor which enhances photoelectric conversion efficiency. <P>SOLUTION: An image sensor 11 comprises an organic photoelectric conversion layer 33 which is laminated on the light incident side of a semiconductor substrate 31. An organic photoelectric conversion film 43 is placed on the organic photoelectric conversion layer 33, and two PDs 41, 42 are placed on the semiconductor substrate 31. In the organic photoelectric conversion layer 33, a pair of transparent electrodes 54-1, 54-2 are provided to sandwich the organic photoelectric conversion film 43, the transparent electrode 54-1 on the semiconductor substrate 31 side is formed so as to have a curved surface protruding to the light incident side, and the organic photoelectric conversion film 43 is formed so as to have the shape of a curved surface copying the curved surface of the transparent electrode 54-1. <P>COPYRIGHT: (C)2013,JPO&INPIT |
