| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and an exposure correction method, capable of improving a yield. <P>SOLUTION: In the semiconductor device manufacturing method, including an exposure step, a detection step and a correction step, the exposure step successively exposes each of a plurality of shot regions, using a photomask having an alignment deviation measurement pattern formed on the outer peripheral side for measuring the alignment deviation of the shot region, for each layer formed on the substrate. On a layer-to-layer basis, the detection step detects the position of the alignment deviation measurement pattern formed on the shot region by the photomask. Based on the position of the alignment deviation measurement pattern detected in the detection step, the correction step corrects an exposure condition in the exposure step, on the layer-to-layer basis. <P>COPYRIGHT: (C)2013,JPO&INPIT |
