| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that allows an increase in capacitance of the entire capacitors while suppressing an increase in the area in which the capacitors occupy on a semiconductor substrate. <P>SOLUTION: A semiconductor device includes: a P-type silicon substrate 1; an N-region 11 provided on the silicon substrate 1; a first dielectric film 15 provided on the N-region 11; a first electrode 17 provided on the first dielectric film 15; a second dielectric film 19 provided on the top surface of the first electrode 17; a third dielectric film 21 provided on side surfaces of the first electrode 17; a fourth dielectric film 23 provided on an adjacent region 5 adjacent to the N-region 11 of the P-type silicon substrate 1; and a second electrode 24 provided above the silicon substrate 1 so as to cover the second dielectric film 19, the third dielectric film 21, and the fourth dielectric film 23. <P>COPYRIGHT: (C)2013,JPO&INPIT |
