发明名称 |
METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
The present invention provides a method and apparatus for manufacturing a semiconductor device using a PVD method and enabling achievement of a desired effective work function and reduction in leak current without increasing an equivalent oxide thickness. A method for manufacturing a semiconductor device in an embodiment of the present invention includes the steps of: preparing a substrate on which an insulating film having a relative permittivity higher than that of a silicon oxide film is formed; and depositing a metal nitride film on the insulating film. The metal nitride depositing step is a step of sputtering deposition in an evacuatable chamber using a metal target and a cusp magnetic field formed over a surface of the metal target by a magnet mechanism in which magnet pieces are arranged as grid points in such a grid form that the adjacent magnet pieces have their polarities reversed from each other.
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申请公布号 |
US2013071975(A1) |
申请公布日期 |
2013.03.21 |
申请号 |
US201213675147 |
申请日期 |
2012.11.13 |
申请人 |
CANON ANELVA CORPORATION;CANON ANELVA CORPORATION |
发明人 |
KITANO NAOMU;SEINO TAKUYA;MATSUO AKIRA;SATO YU;MORIMOTO EITARO |
分类号 |
H01L21/285;H01L29/66 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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