| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid state image pickup element which has improved the picture quality of obtained image data by restricting dark current and increasing the amount of incident light in a light-receiving part. <P>SOLUTION: A solid state image pickup element 1 comprises: a substrate 10 consisting of a semiconductor; a light-receiving part 11, formed inside the substrate 10, which consists of a semiconductor of conductive type, opposite to the substrate, and which stores therein electric charges generated by photoelectric conversion; an insulation layer 12 formed on the substrate 10; a fixed electric charge layer 13, formed on the insulation layer 12, which has fixed electric charges of the same polarity as the electric charges stored in the light-receiving part 11; an antireflection layer 14 formed on the fixed electric charge layer 13; an electric charge transfer part 15, formed adjacent to the light-receiving part 11 in the substrate 10, in which electric charges read out from the light-receiving part 11 are temporarily stored; and a transfer electrode 16 which is formed at least directly above the electric charge transfer part 15. The antireflection layer 14 is formed within a region directly above the light-receiving part 11. <P>COPYRIGHT: (C)2013,JPO&INPIT |
