| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device that can obtain sufficient erasing speed. <P>SOLUTION: The semiconductor memory device includes: a substrate; a first stacked body that has a plurality of electrode layers and a plurality of first insulating layers alternately stacked on the substrate; a second stacked body that is provided on the first stacked body and has a selection gate and a second insulating layer provided thereon; a memory film that is provided on a sidewall of a first hole formed with penetration through the first stacked body in the stacking direction; a gate insulating film that is provided on a sidewall of a second hole which is in communication with the first hole and formed with penetration through the second stacked body in the stacking direction; and a channel body that is provided inside the memory film and inside the gate insulating film. A step portion is formed between a side surface of the selection gate and the second insulating layer, and a region located near an upper end of the selection gate of the channel body is being silicide. <P>COPYRIGHT: (C)2013,JPO&INPIT |
