| 发明名称 |
POWER SEMICONDUCTOR DEVICES AND FABRICATION METHODS |
| 摘要 |
We describe a RESURF semiconductor device having an n-drift region with a p-top layer and in which a MOS (Metal Oxide Semiconductor) channel of the device is formed within the p-top layer. |
| 申请公布号 |
US2013069712(A1) |
申请公布日期 |
2013.03.21 |
| 申请号 |
US201113233672 |
申请日期 |
2011.09.15 |
| 申请人 |
TRAJKOVIC TANYA;UDREA FLORIN;PATHIRANA VASANTHA;UDUGAMPOLA NISHAD |
发明人 |
TRAJKOVIC TANYA;UDREA FLORIN;PATHIRANA VASANTHA;UDUGAMPOLA NISHAD |
| 分类号 |
H01L29/78;G05F3/02;H01L21/336 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
