| 摘要 |
<p>This photoelectric conversion element is configured by pin-bonding an n-type nitride semiconductor layer, an i-type nitride semiconductor layer that is provided on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer that is provided on the i-type nitride semiconductor layer. The photoelectric conversion element is also provided with an interlayer, which is provided between the n-type nitride semiconductor layer and the i-type nitride semiconductor layer, and has the kinds of the constituent elements equal to those of the i-type nitride semiconductor layer but has the composition ratios of the constituent elements different from those of the i-type nitride semiconductor layer. The In composition ratio of the interlayer is lower than the In composition ratio of the i-type nitride semiconductor layer.</p> |
