| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a configuration which realizes high-speed response and high-speed drive of a semiconductor device by improve ON-state characteristics of a transistor, and also provide a reliable semiconductor device. <P>SOLUTION: A transistor comprises a semiconductor layer, a source electrode layer or drain electrode layer, a gate insulator, and a gate electrode layer which are sequentially stacked. The semiconductor layer is a non-single-crystal oxide semiconductor layer which at least contains indium, a group 3 element, zinc and oxygen. The group 3 element functions as a stabilizer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
