| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a normally-off field-effect transistor with a low on-resistance. <P>SOLUTION: A semiconductor device includes: an electron transit layer 11 formed on a substrate 10; an electron supply layer 12 formed on the electron transit layer 11 by a semiconductor having a bandgap wider than that of the electron transit layer 11; a barrier formation layer 13 formed on the electron supply layer 12 by a semiconductor having a bandgap narrower than that of the electron supply layer 12; an upper channel layer 14 formed on the barrier formation layer 13 by a semiconductor with doped impurities; lateral faces of the barrier formation layer 13 and the upper channel layer 14 that are formed by removing the barrier formation layer 13 and the upper channel layer 14; an insulating film 20 formed on the lateral faces; a gate electrode 21 formed via the insulating film 20; a source electrode 22 connected with the upper channel layer 14; and a drain electrode 23 connected with the electron supply layer 12 or the electron transit layer 11. <P>COPYRIGHT: (C)2013,JPO&INPIT |
