发明名称 POWER DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 According to an example embodiment, a power device includes a substrate, a nitride-containing stack on the substrate, and an electric field dispersion unit. Source, drain, and gate electrodes are on the nitride-containing stack. The nitride-containing stack includes a first region that is configured to generate a larger electric field than that of a second region of the nitride-containing stack. The electric field dispersion unit may be between the substrate and the first region of the nitride-containing stack.
申请公布号 US2013069074(A1) 申请公布日期 2013.03.21
申请号 US201213610025 申请日期 2012.09.11
申请人 LEE JAE-WON;CHAE SU-HEE;KIM JUN-YOUN;HWANG IN-JUN;CHOI HYO-JI;SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE JAE-WON;CHAE SU-HEE;KIM JUN-YOUN;HWANG IN-JUN;CHOI HYO-JI
分类号 H01L29/778;H01L21/335;H01L29/205 主分类号 H01L29/778
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