发明名称 |
POWER DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
According to an example embodiment, a power device includes a substrate, a nitride-containing stack on the substrate, and an electric field dispersion unit. Source, drain, and gate electrodes are on the nitride-containing stack. The nitride-containing stack includes a first region that is configured to generate a larger electric field than that of a second region of the nitride-containing stack. The electric field dispersion unit may be between the substrate and the first region of the nitride-containing stack.
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申请公布号 |
US2013069074(A1) |
申请公布日期 |
2013.03.21 |
申请号 |
US201213610025 |
申请日期 |
2012.09.11 |
申请人 |
LEE JAE-WON;CHAE SU-HEE;KIM JUN-YOUN;HWANG IN-JUN;CHOI HYO-JI;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JAE-WON;CHAE SU-HEE;KIM JUN-YOUN;HWANG IN-JUN;CHOI HYO-JI |
分类号 |
H01L29/778;H01L21/335;H01L29/205 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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