发明名称 |
INTEGRATED CIRCUIT STRUCTURE HAVING SELECTIVELY FORMED METAL CAP |
摘要 |
Methods of forming an integrated circuit structure utilizing a selectively formed and at least partially oxidized metal cap over a gate, and associated structures. In one embodiment, a method includes providing a precursor structure including a transistor having a metal gate; forming an etch stop layer over an exposed portion of the metal gate; at least partially oxidizing the etch stop layer; and forming a dielectric layer over the at least partially oxidized etch stop layer.
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申请公布号 |
US2013069161(A1) |
申请公布日期 |
2013.03.21 |
申请号 |
US201113233064 |
申请日期 |
2011.09.15 |
申请人 |
YANG CHIH-CHAO;HORAK DAVID V.;KOBURGER, III CHARLES W.;PONOTH SHOM;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
YANG CHIH-CHAO;HORAK DAVID V.;KOBURGER, III CHARLES W.;PONOTH SHOM |
分类号 |
H01L21/768;H01L23/48 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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