METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

摘要

A method for producing a semiconductor device includes the steps of forming first and second pillar-shaped semiconductors on a substrate at the same time so as to have the same height; forming a first semiconductor layer by doping a bottom region of the first pillar-shaped semiconductor with a donor or acceptor impurity to connect the first semiconductor layer to the second pillar-shaped semiconductor; forming a circuit element including an upper semiconductor region formed by doping an upper region of the first pillar-shaped semiconductor with a donor or acceptor impurity; forming a first conductor layer in the second pillar-shaped semiconductor; forming first and second contact holes that are respectively connected to the first and second pillar-shaped semiconductors; and forming a wiring metal layer that is connected to the upper semiconductor region and the first conductor layer through the first and second contact holes, respectively.