发明名称 MAGNETIC RANDOM ACCESS MEMORY WITH DYNAMIC RANDOM ACCESS MEMORY (DRAM)-LIKE INTERFACE
摘要 A memory device includes a magnetic memory unit for storing a burst of data during burst write operations, each burst of data includes, sequential data units with each data unit being received at a clock cycle, and written during a burst write operation, wherein the burst write operation is performed during multiple clock cycles. Further, the memory device includes a mask register coupled to the magnetic memory unit that generates a write mask during the burst write operation to inhibit or enable data units of write data, furthermore the memory device allowing burst write operation to begin while receiving data units of the next burst of data to be written or providing read data.
申请公布号 US2013073791(A1) 申请公布日期 2013.03.21
申请号 US201113303947 申请日期 2011.11.23
申请人 NEMAZIE SIAMACK;AVALANCHE TECHNOLOGY, INC. 发明人 NEMAZIE SIAMACK
分类号 G06F12/00 主分类号 G06F12/00
代理机构 代理人
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